MC9S08QE8 Datasheet, PDF (11/46 Pages) Freescale Semiconductor, Inc – 8-Bit HCS08 Central Processor Unit

Electrical Characteristics
Table 6. ESD and Latch-Up Protection Characteristics (continued)
3
Charge device model (CDM)
V_CDM
±500
—
V
4
Latch-up current at T_A = 85°C
I_LAT
±100
—
mA
1 _{Parameter is achieved by design characterization on a small sample size from typical devices}
under typical conditions unless otherwise noted.
3.6 DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 7. DC Characteristics
Num C
Characteristic
Symbol
1
Operating Voltage
C
All I/O pins,
low-drive strength
2
P
Output high
voltage
C
All I/O pins, ^VOH
high-drive strength
3
D
Output high
current
Max total I_OH for all ports I_OHT
C
All I/O pins,
low-drive strength
4
P
Output low
voltage
C
All I/O pins, ^VOL
high-drive strength
5
D
Output low
current
6
P _{Input high}
C ^voltage
7
P _{Input low}
C ^voltage
8
C
Input
hysteresis
Input
9 P leakage
current
Hi-Z
10
P
(off-state)
leakage
current
Pullup,
11a P Pulldown
resistors
Max total I_OL for all ports
all digital inputs
all digital inputs
all digital inputs
all input only pins
(Per pin)
all input/output
(per pin)
all digital inputs, when
enabled (all I/O pins other
than
PTA5/IRQ/TCLK/RESET
I_OLT
V_IH
V_IL
V_hys
|I_In|
|I_OZ|
R_PU,
R_PD
Condition
V_DD > 1.8 V,
I_Load = –2 mA
V_DD > 2.7 V,
I_Load = –10 mA
V_DD > 1.8V,
I_Load = –2 mA
—
V_DD > 1.8 V,
I_Load = 0.6 mA
V_DD > 2.7 V,
I_Load = 10 mA
V_DD > 1.8 V,
I_Load = 3 mA
—
V_DD > 2.7 V
V_DD > 1.8 V
V_DD > 2.7 V
V_DD > 1.8 V
—
V_In = V_DD or V_SS
V_In = V_DD or V_SS
—
Min.
1.8
Typical¹
V_DD – 0.5
—
Max.
3.6
—
V_DD – 0.5
—
—
V_DD – 0.5
—
—
—
—
100
Unit
V
V
mA
—
—
0.5
—
—
0.5
V
—
—
0.5
—
—
100
mA
0.70 x V_DD —
—
0.85 x V_DD —
—
V
—
— 0.35 x V_DD
—
— 0.30 x V_DD
0.06 x V_DD —
—
mV
—
0.1
1
μA
—
0.1
1
μA
17.5
—
52.5
kΩ
MC9S08QE8 Series, Rev. 3
Freescale Semiconductor
Preliminary
11
Subject to Change Without Notice