MC9RS08KA8 Datasheet, PDF (24/40 Pages) Freescale Semiconductor, Inc – MCU Block Diagram

Electrical Characteristics
Table 16. Flash Characteristics (continued)
Characteristic
Symbol
Min
Typical¹
Max
Unit
Supply voltage for read operation
0 < fBus < 10 MHz
V_Read
1.8
—
5.5
V
Byte program time
Mass erase time
Cumulative program HV time²
Total cumulative HV time
(total of tme & thv applied to device)
t_prog
20
t_me
500
t_hv
—
t_{hv_total}
—
—
40
μs
—
—
ms
—
8
ms
—
2
hours
HVEN to program setup time
PGM/MASS to HVEN setup time
HVEN hold time for PGM
HVEN hold time for MASS
V_PP to PGM/MASS setup time
HVEN to V_PP hold time
V_PP rise time³
Recovery time
Program/erase endurance
TL to TH = –40°C to 85°C
t_pgs
10
t_nvs
5
t_nvh
5
t_nvh1
100
t_vps
20
t_vph
20
t_vrs
200
t_rcv
1
—
—
μs
—
—
μs
—
—
μs
—
—
μs
—
—
ns
—
—
ns
—
—
ns
—
—
μs
1000
—
cycles
Data retention
t_{D_ret}
15
—
—
years
1 _{Typicals are measured at 25°C.}
2 _{thv is the cumulative high voltage programming time to the same row before next erase. Same address can not be}
programmed more than twice before next erase.
3 _{Fast VPP rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad}
and cause permanent damage to the pad. External filtering for the V_PP power source is recommended. An example V_PP
filter is shown in Figure 22.
100 Ω
12 V
V_PP
1 nF
Figure 22. Example V_PP Filtering
MC9RS08KA8 Series, Rev. 1
24
Preliminary—Subject to Change Without Notice
Freescale Semiconductor