MC9RS08KA8 Datasheet, PDF (23/40 Pages) Freescale Semiconductor, Inc – MCU Block Diagram

Electrical Characteristics
Table 15. 10-bit ADC Characteristics (continued)
Characteristic
Conditions
C Symb
Min Typical¹ Max
Unit
Conversion time (including
sample time)
Short sample (ADLSMP=0)
P
Long sample (ADLSMP=1)
t_ADC
—
—
20
40
—
ADCK
—
cycles
Sample time
Short sample (ADLSMP=0)
—
P
t_ADS
Long sample (ADLSMP=1)
—
3.5
23.5
—
ADCK
—
cycles
Total unadjusted error
10 bit mode
8 bit mode
—
C
E_TUE
—
±1
±2.5
LSB²
±0.5
±1.0
Differential non-linearity
10 bit mode
8 bit mode
P
—
DNL
T
—
±0.5
±1.0
LSB²
±0.3
±0.5
Monotonicity and No-Missing-Codes guaranteed
Integral non-linearity
10 bit mode
8 bit mode
—
±0.5
±1.0
C
INL
LSB²
—
±0.3
±0.5
Zero-scale error
10 bit mode
8 bit mode
P
—
±0.5
±1.5
E_ZS
LSB²
T
—
±0.5
±0.5
Full-Scale error
VADIN = VDDA
10 bit mode
8 bit mode
P
—
±0.5
±1.5
E_FS
LSB²
T
—
±0.5
±0.5
Quantization error
10 bit mode
8 bit mode
—
D
E_Q
—
—
±0.5
LSB²
—
±0.5
Input leakage error
pad leakage³ * RAS
10 bit mode
8 bit mode
—
±0.2
±2.5
D
E_IL
LSB²
—
±0.1
±1
1 _{Typical values assume Temp = 25 °C, fADCK=1.0 MHz unless otherwise stated. Typical values are for reference only and are}
not tested in production.
2 _{1 LSB = (VREFH – VREFL)/2}N
3 _{Based on input pad leakage current. Refer to pad electrical.}
3.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash memory. For detailed
information about program/erase operations, see the reference manual.
Table 16. Flash Characteristics
Characteristic
Supply voltage for program/erase
Program/Erase voltage
VPP current
Program
Mass erase
Symbol
V_DD
V_PP
I_{VPP_prog}
I_{VPP_erase}
Min
2.7
11.8
—
—
Typical¹
Max
Unit
—
5.5
V
12
12.2
V
—
200
μA
—
100
μA
MC9RS08KA8 Series, Rev. 1
Freescale Semiconductor
Preliminary—Subject to Change Without Notice
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