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MC9S08QA4_09 Datasheet, PDF (18/32 Pages) Freescale Semiconductor, Inc – Technical Data | |||
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Electrical Characteristics
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see MC9S08QA4 Series Reference Manual.
Table 14. Flash Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
â40°C to 85°C
Vprog/erase
1.8
â
3.6
V
Supply voltage for read operation
Internal FCLK frequency1
VRead
1.8
â
3.6
V
fFCLK
150
â
200
kHz
Internal FCLK period (1/FCLK)
Byte program time (random location)2
Byte program time (burst mode)2
Page erase time2
Mass erase time2
Program/erase endurance3
TL to TH = â40°C to + 85°C
T = 25°C
tFcyc
tprog
tBurst
tPage
tMass
5
10,000
â
9
4
4000
20,000
â
100,000
6.67
â
â
μs
tFcyc
tFcyc
tFcyc
tFcyc
cycles
Data retention4
tD_ret
15
100
â
years
1 The frequency of this clock is controlled by a software setting.
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
3 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Motorola defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
MC9S08QA4 Series MCU Data Sheet, Rev. 3
18
Freescale Semiconductor
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