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S9S12GN48F0CLH Datasheet, PDF (1229/1292 Pages) Freescale Semiconductor, Inc – MC9S12G Family Reference Manual and Data Sheet | |||
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Electrical Characteristics
A.7.1.15 Program EEPROM (FCMD=0x11)
EEPROM programming time is dependent on the number of words being programmed and their location
with respect to a row boundary since programming across a row boundary requires extra steps.
The typical EEPROM programming time is given by the following equation, where NW denotes the
number of words:
tdpgm
â
â
â
(
34
â
NW)
â
-f-N----V--1-M----O---P--
â
â
+
â
â
(
600
+
( 940
â
NW))
â
-f-N----V---M-1---B---U---S-
â
â
The maximum EEPROM programming time is given by:
tdpgm
â
ââ ( 34
â
NW)
â
f--N----V--1-M----O---P--
â
â
+
ââ ( 600
+
( 1020
â
NW ))
â
f--N----V---M-1---B---U---S-
â
â
A.7.1.16 Erase EEPROM Sector (FCMD=0x12)
Typical EEPROM sector erase times, expected on a new device where no margin verify fails occur, is given
by:
tdera â 5025 â
f--N----V--1-M----O---P-- + 710 â
f--N----V---M-1---B---U---S-
Maximum EEPROM sector erase times is given by:
tdera â 20400 â
f--N----V--1-M----O---P-- + 750 â
f--N----V---M-1---B---U---S-
The EEPROM sector erase time is ~5ms on a new device and can extend to ~20ms as the ï¬ash is cycled.
Freescale Semiconductor
MC9S12G Family Reference Manual, Rev.1.23
1231
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