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MC9S12H256 Datasheet, PDF (105/130 Pages) Motorola, Inc – Device User Guide
Freescale SemiconduMcCt9oS1r2,HI2n56cD.evice User Guide — V01.18
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
Table A-12 NVM Reliability Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Cycles
Data Retention
Lifetime
Unit
1 C Flash/EEPROM (-40˚C to +125˚C)
10
15
Years
2 C EEPROM (-40˚C to +125˚C)
10,000
5
Years
NOTE: Flash cycling performance is 10 cycles at -40˚C to +125˚C. Data retention is
specified for 15 years.
NOTE: EEPROM cycling performance is 10K cycles at -40˚C to 125˚C. Data retention is
specified for 5 years on words after cycling 10K times. However if only 10 cycles
are executed on a word the data retention is specified for 15 years.
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