FGY75N60SMD Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – 600V, 75A Field Stop IGBT

Typical Performance Characteristics
Figure 19. Current Derating
160
140
Common Emitter
V_GE = 15V
120
100
80
60
40
20
0
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, T_C [^oC]
Figure 21. Forward Characteristics
400
100
10
1
0
T_C = 175^oC
T_C = 25^oC
T_C = 75^oC
T_C = 125^oC
T_C = 25^oC
T_C = 75^oC
T_C = 125^oC
T_C = 175^oC
1
2
3
Forward Voltage, V_F [V]
Figure 23. Stored Charge
900
T_C = 25^oC
750 T_C = 175^oC
600
450
di/dt = 200A/μs
300
di/dt = 100A/μs
150
0
0
20
40
60
80
Forward Current, I_F [A]
Figure 20. Load Current vs. Frequency
250
200
Square Wave
T_J <= 175^oC, D = 0.5, V_CE = 400V
V_GE = 15/0V, R_G = 3Ω
150
T_C = 75^oC
100
T_C = 100^oC
50
0
1k
10k
100k
1M
Switching Frequency, f [Hz]
Figure 22. Reverse Current
10000
1000
100
10
T_C = 175^oC
T_C = 125^oC
1
0.1
0.01
0
T_C = 75^oC
T_C = 25^oC
100 200 300 400 500 600
Reverse Voltage, V_R [V]
Figure 24. Reverse Recovery Current
200
T_C = 25^oC
160 ^{TC = 175oC ---}
120
di/dt = 100A/μs
80
di/dt = 200A/μs
40
0
0
20
40
60
80
Forward Current, I_F [A]
FGY75N60SMD Rev. A2
7
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