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FGY75N60SMD Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 600V, 75A Field Stop IGBT
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Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FGY75N60SMD
Device
FGY75N60SMD
Package
Power-247
Typ.
-
-
-
Max.
0.2
0.7
40
Units
oC/W
oC/W
oC/W
Packaging Type
Tube
Qty per Tube
30ea
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ΔBVCES
ΔTJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250μA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250μA, VCE = VGE
IC = 75A, VGE = 15V
IC = 75A, VGE = 15V,
TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC = 400V, IC = 75A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 75A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 175oC
600
-
-
V
-
0.67
-
V/oC
-
-
250
μA
-
-
±400
nA
3.5
5.0
6.5
V
-
1.90
2.50
V
-
2.14
-
V
-
3800
-
pF
-
390
-
pF
-
105
-
pF
-
24
32
ns
-
56
73
ns
-
136
177
ns
-
22
29
ns
-
2.3
2.99
mJ
-
0.77
1.00
mJ
-
3.07
3.99
mJ
-
23
-
ns
-
53
-
ns
-
146
-
ns
-
15
-
ns
-
3.60
-
mJ
-
1.11
-
mJ
-
4.71
-
mJ
FGY75N60SMD Rev. A2
2
www.fairchildsemi.com
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