FGY75N60SMD Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 600V, 75A Field Stop IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
4
75A
150A
I_C = 40A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Capacitance Characteristics
8000
6000
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
C_ies
4000
2000
C_oes
C_res
0
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 11. Turn-off Characteristics vs.
Gate Resistance
5500
1000
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 75A
T_C = 25^oC
T_C = 175^oC
t_d(off)
Figure 8. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 175^oC
16
12
8
4
75A
150A
I_C = 40A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC, ICE=75A
12
300V
V_CC = 200V
400V
9
6
3
0
0
50
100
150
200
250
Gate Charge, Q_g [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
100
t_r
100
t_f
10
0
10
20
30
40
50
Gate Resistance, R_G [Ω]
10
0
t_d(on)
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 75A
T_C = 25^oC
T_C = 175^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
FGY75N60SMD Rev. A2
5
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