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| FGY75N60SMD Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 600V, 75A Field Stop IGBT | |||
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Qg
Total Gate Charge
-
Qge
Gate to Emitter Charge
VCE = 400V, IC = 75A,
-
VGE = 15V
Qgc
Gate to Collector Charge
-
248
370
nC
28
42
nC
129
195
nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 50A
TC = 25oC
TC = 175oC
Erec
Reverse Recovery Energy
TC = 175oC
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 50A, dIF/dt = 200A/μs
VR=400V
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
Min.
-
-
-
-
-
-
-
Typ.
1.75
1.35
0.14
41
126
81
736
Max
2.1
-
-
55
-
115
-
Units
V
mJ
ns
nC
FGY75N60SMD Rev. A2
3
www.fairchildsemi.com
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