FGY75N60SMD Datasheet, PDF (6/10 Pages) Fairchild Semiconductor – 600V, 75A Field Stop IGBT

Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
V_GE = 15V, R_G = 3Ω
T_C = 25^oC
T_C = 175^oC
t_d(off)
100
t_f
Figure 14. Turn-on Characteristics vs.
Collector Current
200
Common Emitter
V_GE = 15V, R_G = 3Ω
100 T_C = 25^oC
t_r
T_C = 175^oC
t_d(on)
10
10
0
30
60
90
120
150
Collector Current, I_C [A]
5
0
30
60
90
120
150
Collector Current, I_C [A]
Figure 15. Switching Loss vs. Collector Current
30
Common Emitter
V_GE = 15V, R_G = 3Ω
10 _{TC = 25}^o_C
E_on
T_C = 175^oC
Figure 16. Switching Loss vs. Gate Resistance
30
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 75A
10 _{TC = 25}^o_C
T_C = 175^oC
E_on
1
E_off
E_off
0.1
0
30
60
90
120
150
Collector Current, I_C [A]
Figure 17. SOA Characteristics
500
10μs
100
100μs
10
1ms
10 ms
DC
1 *Notes:
1. T_C = 25^oC
2. T_J = 175^oC
3. Single Pulse
0.1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
1
0.5
0
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 18. Turn off Switching SOA
Characteristics
300
100
10
Safe Operating Area
V_GE = 15V, T_C = 175^oC
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
FGY75N60SMD Rev. A2
6
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