FGY75N60SMD Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 600V, 75A Field Stop IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
225
T_C = 25^oC
180
20V
15V
12V
10V
135
Figure 2. Typical Output Characteristics
225
T_C = 175^oC
180
20V
15V
12V
10V
135
90
90
V_GE = 8V
V_GE = 8V
45
45
0
0
1
2
3
4
5
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
225
Common Emitter
V_GE = 15V
180 _{TC = 25}^o_C
T_C = 175^oC
135
0
0
1
2
3
4
5
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
225
Common Emitter
V_CE = 20V
180 TC = 25^oC
T_C = 175^oC
135
90
90
45
45
0
0
1
2
3
4
5
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
Common Emitter
V_GE = 15V
3.0
150A
2.5
75A
2.0
I_C = 40A
1.5
1.0
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, T_C [^oC]
0
2
4
6
8
10
12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = -40^oC
16
12
8
150A
4
75A
I_C = 40A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGY75N60SMD Rev. A2
4
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