FGL35N120FTD Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 1200V, 35A Trench IGBT

Typical Performance Characteristics
Figure 19. Forward Characteristics
50
Figure 20. Reverse Recovery Current
8
10
T_J = 125^oC
7
di/dt = 200A/µs
6
T_J = 25^oC
1
0.2
0.0
T_C = 25^oC
T_C = 125^oC
0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage, V_F [V]
Figure 21. Stored Charge
1.4
5
di/dt = 100A/µs
4
3
10
20
30
40
Forward Current, I_F [A]
Figure 22. Reverse Recovery Time
600
1.2
di/dt = 200A/µs
1.0
di/dt = 100A/µs
0.8
500
di/dt = 100A/µs
400
di/dt = 200A/µs
300
200
0.6
10
20
30
40
Forward Current, I_F [A]
100
10
20
30
40
Forward Current, I_F [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
0.05
0.01 ^0.02
0.01
single pulse
0.001
1E-5
0.0001
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGL35N120FTD Rev. A
7
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