FGL35N120FTD Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 1200V, 35A Trench IGBT

FGL35N120FTD
1200V, 35A Trench IGBT
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: V_CE(sat) = 1.68 V @ I_C = 35A
• High Input Impedance
Applications
• Induction Heating And Microwave Oven
• Soft Switching Applications
February 2010
tm
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
C
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(Diode)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2010 Fairchild Semiconductor Corporation
1
FGL35N120FTD Rev. A
G
E
Ratings
1200
± 25
70
35
105
40
368
147
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
o_C
o_C
o_C
Ratings
0.34
0.9
25
Units
o_C/W
o_C/W
o_C/W
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