FGL35N120FTD Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 1200V, 35A Trench IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
8
70A
35A
4
I_C = 18A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Capacitance Characteristics
8000
6000
Common Emitter
V_GE = 0V, f = 1MHz
C_ies
T_C = 25^oC
4000
2000
C_oes
C_res
0
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 11. SOA Characteristics
400
100
10µs
10
100µs
1ms
1
10 ms
*Notes:
0.1 _{1. TC = 25}o_C
2. T_J = 150^oC
3. Single Pulse
0.01
1
10
100
DC
1000 4000
Collector-Emitter Voltage, V_CE [V]
Figure 8. Load Current vs. Frequency
150
V_CC = 600V
load Current : peak of square wave
120
90
60
30 Duty cycle : 50%
T = 100^oC
C
Power Dissipation = 147W
0
1
10
100
Frequency [kHz]
1000
Figure 10. Gate Charge Characteristics
15
Common Emitter
T_C = 25^oC
12
V_CC = 200V
9
600V
400V
6
3
0
0
50
100
150
200
250
Gate Charge, Q_g [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
100
20
0
t_r
t_d(on)
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 35A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
FGL35N120FTD Rev. A
5
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