FGL35N120FTD Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 1200V, 35A Trench IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180
T_C = 25^oC
20V
17V
150
15V
12V
120
Figure 2. Typical Output Characteristics
180
T_C = 125^oC
20V
17V
150
15V
12V
120
90
10V
60
9V
30
V_GE = 8V
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
100
V_GE = 15V
T_C = 25^oC
80 ^{TC = 125oC}
90
10V
60
9V
30
V_GE = 8V
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
120
Common Emitter
V_CE = 20V
100 _{TC = 25}o_C
T_C = 125^oC
80
60
60
40
40
20
20
0
0
1
2
3
4
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.8
Common Emitter
2.6 ^{VGE = 15V}
70A
2.4
2.2
2.0
35A
1.8
1.6
I_C = 18A
1.4
1.2
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
0
4
6
8
10
12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
70A
35A
4
I_C = 18A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGL35N120FTD Rev. A
4
www.fairchildsemi.com