FGL35N120FTD Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 1200V, 35A Trench IGBT

Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
2000
1000
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 35A
T_C = 25^oC
T_C = 125^oC
t_d(off)
Figure 14. Turn-on Characteristics vs.
Collector Current
200
100
t_r
t_f
100
50
0
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
600
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
t_d(off)
100
t_f
50
10 20 30 40 50 60 70
Collector Current, I_C [A]
Figure 17. Switching Loss vs. Collector Current
10
E_on
10
10
t_d(on)
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
20 30 40 50 60 70
Collector Current, I_C [A]
Figure 16.Switching Loss vs. Gate Resistance
8
E_on
1
0.3
0
E_off
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 35A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 18. Turn off Switing
SOA Characteristics
200
100
1
0.3
10
E_off
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
20 30 40 50 60 70
Collector Current, I_C [A]
FGL35N120FTD Rev. A
6
10
Safe Operating Area
V_GE = 15V, T_C = 125^oC
1
1
10
100
1000
Collector-Emitter Voltage, V_CE [V]
3000
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