FGL35N120FTD Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 1200V, 35A Trench IGBT

Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_FM
Diode Forward Voltage
I_F = 35A
t_rr
Diode Reverse Recovery Time
I_rr
Diode Peak Reverse Recovery
Current
I_F = 35A,
di/dt = 200A/µs
Q_rr
Diode Reverse Recovery Charge
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
Min.
-
-
-
-
-
-
-
-
Typ.
2.7
2.5
337
520
7.6
12.9
1292
3377
Max
3.4
-
-
-
-
-
-
-
Units
V
ns
A
nC
FGL35N120FTD Rev. A
3
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