FGH60N60SMD Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – 600V, 60A Field Stop IGBT

Typical Performance Characteristics
Figure 19. Current Derating
130
120
Common Emitter
110
V_GE = 15V
100
90
80
70
60
50
40
30
20
10
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, T_C [^oC]
Figure 21. Forward Characteristics
200
100
T_C = 175^oC
10
1
0
T_C = 125^oC
T_C = 75^oC
T_C = 25^oC
T_C = 25^oC
T_C = 75^oC ----
T_C = 125^oC ----
T_C = 175^oC
1
2
3
4
Forward Voltage, V_F [V]
Figure 23. Stored Charge
350
T_C = 25^oC
300 T_C = 175^oC ----
250
200
150
100
di/dt = 100A/μs
di/dt = 200A/μs
50
0
0
10 20 30 40 50 60
Forwad Current, I_F [A]
Figure 20. Load Current Vs. Frequency
180
Square Wave
160
T_J < 175^oC, D = 0.5, V_CE = 400V
140
V_GE = 15/0V, R_G = 3Ω
120
100
Tc = 75^oC
80
Tc = 100^oC
60
40
20
0
1k
10k
100k
1M
Switching Frequency, f [Hz]
Figure 22. Reverse Current
10000
1000
T_C = 175^oC
100
T_C = 125^oC
10
T_C = 75^oC
1
0.1
T_C = 25^oC
0.01
0
100 200 300 400 500 600
Reverse Voltage,V_R [V]
Figure 24. Reverse Recovery Time
100
T_C = 25^oC
90 _{TC = 175}o_{C ----}
80
70
60
di/dt = 100A/μs
50
di/dt = 200A/μs
40
30
20
0
10 20 30 40 50 60
Forward Current, I_F [A]
FGH60N60SMD Rev. A1
7
www.fairchildsemi.com