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FGH60N60SMD Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 600V, 60A Field Stop IGBT
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Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
-
-
-
Max.
0.25
1.1
40
Package Marking and Ordering Information
Device Marking
FGH60N60SMD
Device
FGH60N60SMD
Package
TO-247
Reel Size
-
Tape Width
-
Units
oC/W
oC/W
oC/W
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ΔBVCES
ΔTJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250μA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250μA, VCE = VGE
IC = 60A, VGE = 15V
IC = 60A, VGE = 15V,
TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC = 400V, IC = 60A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 60A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 175oC
600
-
-
V
-
0.6
-
V/oC
-
-
250
μA
-
-
±400
nA
3.5
4.5
6.0
V
-
1.9
2.5
V
-
2.1
-
V
-
2915
-
pF
-
270
-
pF
-
85
-
pF
-
18
27
ns
-
47
70
ns
-
104
146
ns
-
50
68
ns
-
1.26
1.94
mJ
-
0.45
0.6
mJ
-
1.71
2.54
mJ
-
18
-
ns
-
41
-
ns
-
115
-
ns
-
48
-
ns
-
2.1
-
mJ
-
0.78
-
mJ
-
2.88
-
mJ
FGH60N60SMD Rev. A1
2
www.fairchildsemi.com
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