FGH60N60SMD Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 600V, 60A Field Stop IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
60A
4
I_C = 30A
120A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Capacitance Characteristics
7000
6000
5000
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
4000
C_ies
3000
2000
1000
C_oes
C_res
0
0.1
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 11. SOA Characteristics
300
100
10μs
100μs
1ms
10 ms
10
DC
1
*Notes:
0.1
1. T_C = 25^oC
2. T_J = 175^oC
3. Single Pulse
0.01
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 8. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 175^oC
16
12
8
60A
4
120A
I_C = 30A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
9
V_CC = 200V
300V
400V
6
3
0
0
40
80
120
160
200
Gate Charge, Q_g [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
80
t_r
60
40
20
10
0
t_d(on)
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 60A
T_C = 25^oC
T_C = 175^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
FGH60N60SMD Rev. A1
5
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