FGH60N60SMD Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 600V, 60A Field Stop IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180
T_C = 25^oC
20V
15V
12V
150
10V
120
90
60
V_GE = 8V
30
0
0
2
4
6
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
180
Common Emitter
150 ^{VGE = 15V}
T_C = 25^oC
120 ^{TC = 175oC}
90
60
30
0
0
1
2
3
4
5
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
Common Emitter
V_GE = 15V
3.0
120A
Figure 2. Typical Output Characteristics
180
T_C = 175^oC
150
20V
12V
15V
10V
120
90
60
V_GE = 8V
30
0
0
2
4
6
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
180
Common Emitter
150
V_CE = 20V
T_C = 25^oC
T_C = 175^oC
120
90
60
30
0
2
4
6
8
10
12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = -40^oC
16
2.5
60A
2.0
I_C = 30A
1.5
1.0
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, T_C [^oC]
12
8
60A
4
I_C = 30A
120A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGH60N60SMD Rev. A1
4
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