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| FGH60N60SMD Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 600V, 60A Field Stop IGBT | |||
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Electrical Characteristics of the IGBT (Continued)
Symbol
Parameter
Test Conditions
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 60A,
VGE = 15V
Min.
-
-
-
Typ.
189
20
91
Max
284
30
137
Units
nC
nC
nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 30A
TC = 25oC
TC = 175oC
Erec
Reverse Recovery Energy
TC = 175oC
trr
Diode Reverse Recovery Time IF =30A, dIF/dt = 200A/μs
TC = 25oC
TC = 175oC
Qrr
Diode Reverse Recovery Charge
TC = 25oC
TC = 175oC
Min.
-
-
-
-
-
-
-
Typ.
2.1
1.7
79
30
72
44
238
Max
2.7
-
-
39
-
62
-
Units
V
uJ
ns
nC
FGH60N60SMD Rev. A1
3
www.fairchildsemi.com
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