FGH60N60SMD Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 600V, 60A Field Stop IGBT

March 2011
FGH60N60SMD
600V, 60A Field Stop IGBT
Features
• Maximum Junction Temperature : T_J =175^oC
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: V_CE(sat) =1.9V(Typ.) @ I_C = 60A
• High input impedance
• Fast switching
• Tighten Parameter Distribution
• RoHS compliant
Applications
• Solar Inverter, UPS, SMPS, PFC
• Induction Heating
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Solar
Inverter, UPS, SMPS, IH and PFC applications where low con-
duction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_{FM (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ T_C = 25^oC
@ T_C = 100^oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ T_C = 25^oC
@ T_C = 100^oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ T_C = 25^oC
@ T_C = 100^oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
Ratings
600
± 20
120
60
180
60
30
180
600
300
-55 to +175
-55 to +175
300
Units
V
V
A
A
A
A
A
A
W
W
o_C
o_C
o_C
©2011 Fairchild Semiconductor Corporation
1
FGH60N60SMD Rev. A1
www.fairchildsemi.com