FGH40T65UPD Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – 650 V, 40 A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 19. Current Derating
90
60
30
0
0 25 50 75 100 125 150 175 200
Case temperature, T_C [^oC]
Figure 21. Forward Characteristics
200
T_C = 25^oC
100 T_C = 75^oC
T_C = 175^oC
T_C = 175^oC
10
T_C = 75^oC
T_C = 25^oC
1
0
1
2
3
4
5
Forward Voltage, V_F [V]
Figure 23. Stored Charge
400
200A/μs
300
200
T_C = 25^oC
100 T_C = 175^oC
diF/dt = 100A/μs
200A/μs
diF/dt = 100A/μs
0
5 10 15 20 25 30 35 40
Forwad Current, I_F [A]
Figure 20. Load Current Vs. Frequence
160
V_CC = 400V
load Current : peak of square wave
120
T_C = 100^oC
80
40
Duty cycle : 50%
T = 100^oC
C
Powe Dissipation = 134 W
0
1k
10k
100k
1M
Switching Frequency, f [Hz]
Figure 22. Reverse Recovery Current
6
200A/μs
4
200A/μs
diF/dt = 100A/μs
2
diF/dt = 100A/μs
T_C = 25^oC
T_C = 175^oC
0
0
9
18
27
36
45
I_C [A]
Figure 24. Reverse Recovery Time
150
200A/μs
100
T_C = 25^oC
T_C = 175^oC
50
diF/dt = 100A/μs
200A/μs
diF/dt = 100A/μs
0
5 10 15 20 25 30 35 40
Forward Current, I_F [A]
©2012 Fairchild Semiconductor Corporation
7
FGH40T65UPD Rev. C0
www.fairchildsemi.com