FGH40T65UPD Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 650 V, 40 A Field Stop Trench IGBT

Electrical Characteristics of the IGBT (Continued)
Symbol
Parameter
Test Conditions
Q_g
Total Gate Charge
Q_ge
Gate to Emitter Charge
Q_gc
Gate to Collector Charge
V_CE = 400V, I_C = 40A,
V_GE = 15V
Min.
-
-
-
Typ.
177
23
100
Max
265
35
150
Unit
nC
nC
nC
Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_FM
Diode Forward Voltage
I_F = 20A
T_C = 25^oC
T_C = 175^oC
E_rec
Reverse Recovery Energy
T_C = 175^oC
t_rr
Diode Reverse Recovery Time
I_F = 20A, dI_F/dt = 200A/μs
T_C = 25^oC
T_C = 175^oC
Q_rr
Diode Reverse Recovery Charge
T_C = 25^oC
T_C = 175^oC
Min.
-
-
-
-
-
-
-
Typ.
2.1
1.9
96
33
128
53
341
Max
2.7
-
-
43
-
74
-
Unit
V
uJ
ns
nC
©2012 Fairchild Semiconductor Corporation
3
FGH40T65UPD Rev. C0
www.fairchildsemi.com