FGH40T65UPD Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 650 V, 40 A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
40A
80A
4
I_C = 20A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Capacitance Characteristics
10000
C_ies
1000
100 ^{Common Emitter}
V_GE = 0V, f = 1MHz
T_C = 25^oC
C_oes
C_res
30
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 11. SOA Characteristics
1000
100
10μs
100μs
10
10 ms
1ms
DC
1
*Notes:
0.1 1. T_C = 25^oC
2. T_J = 175^oC
3. Single Pulse
0.01
0.1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 8. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 175^oC
16
12
8
40A
80A
4
I_C = 20A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
200V
300V
9
V_CC = 400V
6
3
0
0
30 60 90 120 150 180
Gate Charge, Q_g [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
t_r
10
5
0
t_d(on)
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 40A
T_C = 25^oC
T_C = 175^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
©2012 Fairchild Semiconductor Corporation
5
FGH40T65UPD Rev. C0
www.fairchildsemi.com