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FGH40T65UPD Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 650 V, 40 A Field Stop Trench IGBT
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Package Marking and Ordering Information
Device Marking
FGH40T65UPD
Device
FGH40T65UPD
Package
TO-247
Eco Status
-
Packing Type
-
Qty per Tube
30ea
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ΔBVCES
ΔTJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250uA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40mA, VCE = VGE
IC = 40A, VGE = 15V
IC = 40A, VGE = 15V,
TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
TSC
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
VCC = 400V, IC = 40A,
RG = 7Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 40A,
RG = 7Ω, VGE = 15V,
Inductive Load, TC = 175oC
VGE = 15V, VCC =400V,
RG = 10Ω
650
-
-
V
-
0.6
-
V/oC
-
-
250
μA
-
-
±400
nA
4.0
6.0
7.5
V
-
1.65
2.3
V
-
2.1
-
V
-
2730 3630
pF
-
82
110
pF
-
48
72
pF
-
20
26
ns
-
26
34
ns
-
144
187
ns
-
17
22
ns
-
1.59
2.1
mJ
-
0.58
0.76
mJ
-
2.17
2.86
mJ
-
19
-
ns
-
38
-
ns
-
153
-
ns
-
60
-
ns
-
1.84
-
mJ
-
0.98
-
mJ
-
2.82
-
mJ
5
-
-
us
©2012 Fairchild Semiconductor Corporation
2
FGH40T65UPD Rev. C0
www.fairchildsemi.com
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