FGH40T65UPD Datasheet, PDF (6/10 Pages) Fairchild Semiconductor – 650 V, 40 A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
1000
t_d(off)
100
10
1
0
t_f
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 40A
T_C = 25^oC
T_C = 175^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
1000
Figure 14. Turn-on Characteristics vs.
Collector Current
1000
100
t_r
t_d(on)
10
1
20
Common Emitter
R_G = 7Ω, V_GE = 15V, V_cc = 400V
T_C = 25^oC
T_C = 175^oC
30 40 50 60 70 80
Collector Current, I_C [A]
Figure 16. Switching Loss vs.
Gate Resistance
10000
100
t_d(off)
10
1
20
t_f
Common Emitter
V_GE = 15V, R_G = 7Ω
V_cc = 400V
T_C = 25^oC
T_C = 175^oC
30 40 50 60 70 80
Collector Current, I_C [A]
Figure 17. Switching Loss vs.
Collector Current
10000
E_on
1000
100
0
E_off
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 40A
T_C = 25^oC
T_C = 175^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 18. Turn off Switching
SOA Characteristics
200
100
1000
100
20
E_on
E_off
Common Emitter
V_GE = 15V, R_G = 7Ω
T_C = 25^oC
T_C = 175^oC
30 40 50 60 70 80
Collector Current, I_C [A]
©2012 Fairchild Semiconductor Corporation
FGH40T65UPD Rev. C0
10
Safe Operating Area
V_GE = 15V, T_C = 175^oC
1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
6
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