FGH40T65UPD Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 650 V, 40 A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120
20V _15V
100
80
T_C = 25^oC
12V
60
10V
40
20
V_GE = 8V
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
120
100
80
60
40
Common Emitter
V_GE = 15V
20
T_C = 25^oC
T_C = 175^oC
0
0
2
4
6
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4.0
Common Emitter
V_GE = 15V
3.5
80A
3.0
2.5
2.0
40A
1.5
I_C = 20A
1.0
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, T_C [^oC]
Figure 2. Typical Output Characteristics
120
20V
T_C = 175^oC
15V
100
80
12V
60
10V
40
20
V_GE = 8V
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
120
Common Emitter
V_CE = 20V
100 _{TC = 25}o_C
T_C = 175^oC
80
60
40
20
0
3
6
9
12
15
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = -40^oC
16
12
8
40A
80A
4
I_C = 20A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
©2012 Fairchild Semiconductor Corporation
4
FGH40T65UPD Rev. C0
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