FGH20N60UFD_13 Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

Typical Performance Characteristics
Figure 19. Forward Characteristics
40
T_J = 125^oC
10
T_J = 75^oC
T_J = 25^oC
1
0.1
0
T_C = 25^oC
T_C = 75^oC
T_C = 125^oC
1
2
3
4
Forward Voltage, V_F [V]
Figure 21. Stored Charge
0.05
Figure 20. Reverse Current
100
10
1
0.1
0.01
T_C = 125^oC
T_C = 75^oC
T_C = 25^oC
1E-3
0
100 200 300 400 500 600
Reverse Voltage, V_R [V]
Figure 22. Reverse Recovery Time
60
0.04
0.03
0.02
200A/s
di/dt = 100A/s
50
di/dt = 100A/s
40
30
200A/s
20
0.01
0
5
10
15
20
Forward Current, I_F [A]
10
0
5
10
15
20
Forward Current, I_F [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01
0.01 _{single pulse}
1E-3
1E-5
1E-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2008 Fairchild Semiconductor Corporation
7
FGH20N60UFD Rev. C0
www.fairchildsemi.com