FGH20N60UFD_13 Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

Thermal Characteristics
Symbol
R_JC(IGBT)
R_JC(Diode)
R_JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
-
-
-
Max.
0.76
2.51
40
Unit
o_C/W
o_C/W
o_C/W
Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_FM
Diode Forward Voltage
I_F = 10A
T_C = 25^oC
T_C = 125^oC
t_rr
Q_rr
Diode Reverse Recovery Time
I_ES =10A, dI_ES/dt = 200A/s
Diode Reverse Recovery Charge
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
Min.
-
-
-
-
-
-
Typ.
1.9
1.7
34
57
41
96
Max
2.5
-
-
-
-
-
Unit
V
ns
nC
©2008 Fairchild Semiconductor Corporation
3
FGH20N60UFD Rev. C0
www.fairchildsemi.com