FGH20N60UFD_13 Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
1000
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 125^oC
t_d(off)
100
t_f
10
0
10 20 30 40 50 60
Gate Resistance, R_G []
Figure 15. Turn-off Characteristics vs.
Collector Current
300
Common Emitter
V_GE = 15V, R_G = 10
T_C = 25^oC
T_C = 125^oC
100
t_d(off)
Figure 14. Turn-on Characteristics vs.
Collector Current
200
Common Emitter
V_GE = 15V, R_G = 10
100 _{TC = 25}o_C
T_C = 125^oC
t_r
10
t_d(on)
3
0
10
20
30
40
Collector Current, I_C [A]
Figure 16. Switching Loss vs.
Gate Resistance
3
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 20A
1 ^{TC = 25oC}
T_C = 125^oC
E_on
t_f
E_off
10
0
10
20
30
40
Collector Current, I_C [A]
Figure17. Switching Loss vs.
Collector Current
10
Common Emitter
V_GE = 15V, R_G = 10
T_C = 25^oC
T_C = 125^oC
E_on
1
E_off
0.1
0.02
0
10
20
30
40
Collector Current, I_C [A]
0.1
0
10 20 30 40 50 60
Gate Resistance, R_G []
Figure18. Turn off Switching
SOA Characteristics
100
10
Safe Operating Area
V_GE = 15V, T_C = 125^oC
1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
©2008 Fairchild Semiconductor Corporation
6
FGH20N60UFD Rev. C0
www.fairchildsemi.com