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FGH20N60UFD_13 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT
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Package Marking and Ordering Information
Device Marking
Device
FGH20N60UFD FGH20N60UFDTU
Package
TO-247
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250A
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250A, VCE = VGE
IC = 20A, VGE = 15V
IC = 20A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 20A,
RG = 10, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 20A,
RG = 10, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 20A,
VGE = 15V
600
-
-
V
-
0.6
-
V/oC
-
-
250
A
-
-
±400
nA
4.0
5.0
6.5
V
-
1.8
2.4
V
-
2.0
-
V
-
940
-
pF
-
110
-
pF
-
40
-
pF
-
13
-
ns
-
17
-
ns
-
87
-
ns
-
32
64
ns
-
0.38
-
mJ
-
0.26
-
mJ
-
0.64
-
mJ
-
13
-
ns
-
16
-
ns
-
92
-
ns
-
63
-
ns
-
0.41
-
mJ
-
0.36
-
mJ
-
0.77
-
mJ
-
63
-
nC
-
7
-
nC
-
32
-
nC
©2008 Fairchild Semiconductor Corporation
2
FGH20N60UFD Rev. C0
www.fairchildsemi.com
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