FGH20N60UFD_13 Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
60
T_C = 25^oC
20V
15V
12V
10V
40
Figure 2. Typical Output Characteristics
60
T_C = 125^oC
20V
15V
12V
10V
40
20
V_GE = 8V
0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
60
Common Emitter
V_GE = 15V
T_C = 25^oC
40 ^{TC = 125oC}
20
V_GE = 8V
0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
60
Common Emitter
V_CE = 20V
T_C = 25^oC
T_C = 125^oC
40
20
20
0
0
1
2
3
4
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.2
Common Emitter
V_GE = 15V
2.8
40A
2.4
2.0
20A
1.6
I_C = 10A
1.2
0.8
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
0
4
6
8
10
12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = -40^oC
16
12
8
40A
4
20A
I_C = 10A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
©2008 Fairchild Semiconductor Corporation
4
FGH20N60UFD Rev. C0
www.fairchildsemi.com