FGH20N60UFD_13 Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
40A
4
20A
I_C = 10A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Capacitance Characteristics
2500
2000
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
1500
C_ies
1000
500
C_oes
C_res
0
0.1
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 11. SOA Characteristics
100
10s
10
100s
1ms
10 ms
1
DC
Single Nonrepetitive
0.1 _{Pulse TC = 25}o_C
Curves must be derated
linearly with increase
in temperature
0.01
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 8. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
8
20A
4
40A
I_C = 10A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
300V
9
V_CC = 100V
200V
6
3
0
0
20
40
60
80
Gate Charge, Q_g [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
10
5
0
t_r
t_d(on)
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 125^oC
10 20 30 40 50 60
Gate Resistance, R_G []
©2008 Fairchild Semiconductor Corporation
5
FGH20N60UFD Rev. C0
www.fairchildsemi.com