FGB7N60UNDF Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 600V, 7A Short Circuit Rated IGBT

Typical Performance Characteristics
Figure 19. Reverse Recovery Current
100
10
T_J = 125^oC
1
0.1
T_J = 75^oC
0.01
1E-3
T_J = 25^oC
1E-4
50
200
400
600
Reverse Voltage, V_R [V]
Figure 21. Reverse Recovery Time
100
di/dt = 100A/µs
200A/µs
Figure 20. Stored Charge
0.20
T_C = 25^oC
T_C = 125^oC
0.15
200A/µs
di/dt = 100A/µs
0.10
0.05
200A/µs
di/dt = 100A/µs
0.00
0
2
4
6
8
Forward Current, I_F [A]
50
di/dt = 100A/µs
200A/µs
T_C = 25^oC
T_C = 125^oC
0
0
2
4
6
8
10
Forward Current, I_F [A]
Figure 22.Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
1E-5
1E-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGB7N60UNDF Rev. A
7
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