FGB7N60UNDF Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 600V, 7A Short Circuit Rated IGBT

Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
30
10
t_d(on)
1
0.1
0
t_r
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
5
10
15
Collector Current, I_C [A]
Figure 15. Switching Loss vs.
Gate Resistance
1000
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 7A
T_C = 25^oC
T_C = 125^oC
E_on
100
E_off
50
0
10 20 30 40 50 60
Gate Resistance, R_G [Ω]
Figure 17. Turn off Switching
SOA Characteristics
30
10
Safe Operating Area
V_GE = 15V, T_C = 125^oC
1
1
10
100
1000
Collector-Emitter Voltage, V_CE [V]
Figure 14. Turn-off Characteristics vs.
Collector Current
500
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
100
t_f
t_d(off)
10
0
5
10
15
20
Collector Current, I_C [A]
Figure 16. Switching Loss vs
Collector Current
1000
E_on
E_off
100
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
0.02
0
5
10
15
20
Collector Current, I_C [A]
Figure 18. Forward Characteristics
30
10
T_J = 125^oC
T_J = 75^oC
T_J = 25^oC
1
0.2
0
1
2
3
Forward Voltage, V_F [V]
FGB7N60UNDF Rev. A
6
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