English
Language : 

FGB7N60UNDF Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 600V, 7A Short Circuit Rated IGBT
◁
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Typ.
Max.
1.5
3.5
40
Notes:
2: Mounted on 1” square PCB (FR4 or G-10 material)
Package Marking and Ordering Information
Device Marking
FGB7N60UNDF
Device
FGB7N60UNDF
Package
TO-263AB/D2-PAK
Rel Size
Tape Width
-
Units
oC/W
oC/W
oC/W
Quantity
50
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250µA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 7mA, VCE = VGE
IC = 7A, VGE = 15V
IC = 7A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
VCC = 400V, IC = 7A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 7A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCC = 350V,
RG = 100Ω, VGE = 15V,
TC = 150oC
600
-
-
V
-
-
1
mA
-
-
±10
uA
5.5
6.8
8.5
V
-
1.9
2.3
V
-
2.1
-
V
-
275
pF
-
41
pF
-
10
pF
-
5.9
ns
-
4.2
ns
-
32.3
ns
-
68
89
ns
-
99
uJ
-
104
uJ
-
203
uJ
-
6
ns
-
4.3
ns
-
33.8
ns
-
113
ns
-
181
uJ
-
144
uJ
-
325
uJ
10
us
FGB7N60UNDF Rev. A
2
www.fairchildsemi.com
 ▷