FGB7N60UNDF Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 600V, 7A Short Circuit Rated IGBT

Electrical Characteristics of the IGBT T_C = 25°C unless otherwise noted
Q_g
Total Gate Charge
Q_ge
Gate to Emitter Charge
Q_gc
Gate to Collector Charge
V_CE = 400V, I_C = 7A,
V_GE = 15V
-
18
-
nC
-
3
-
nC
-
13
-
nC
Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_FM
Diode Forward Voltage
I_F = 7A
T_C = 25^oC
T_C = 125^oC
t_rr
Q_rr
Diode Reverse Recovery Time
I_F =7A, dI_F/dt = 200A/µs
Diode Reverse Recovery Charge
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
Min.
-
-
-
-
-
-
Typ.
1.7
1.6
32.3
70
59
172
Max Units
2.2
V
ns
nC
-
FGB7N60UNDF Rev. A
3
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