FGB7N60UNDF Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 600V, 7A Short Circuit Rated IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
4
I_C = 3.5A
7A
14A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate charge Characteristics
15
200V
12
400V
V_CC = 100V
9
6
3
Common Emitter
T_C = 25^oC
0
0
5
10
15
20
Gate Charge, Q_g [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
200
100
10
t_d(on)
t_r
1
0.1
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 7A
T_C = 25^oC
T_C = 125^oC
0
10 20 30 40 50 60
Gate Resistance, R_G [Ω]
Figure 8. Capacitance Characteristics
1000
C_ies
C_oes
100
C_res
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
10
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
30
10
10µs
100µs
1
1ms
10 ms
0.1
0.01
1
Single Nonrepetitive
Pulse T_C = 25^oC
Curves must be derated
linearly with increase
in temperature
10
DC
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
300
100
t_f
t_d(off)
10
0
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 7A
T_C = 25^oC
T_C = 125^oC
10 20 30 40 50 60
Gate Resistance, R_G [Ω]
FGB7N60UNDF Rev. A
5
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