FGB7N60UNDF Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 600V, 7A Short Circuit Rated IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
30
T_C = 25^oC
20V
17V
15V
V_GE = 12V
20
Figure 2. Typical Output Characteristics
30
T_C = 125^oC
20V
17V
15V
20
V_GE = 12V
10
10
0
0.0 1.5 3.0 4.5 6.0 7.5 9.0
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
30
Common Emitter
25
V_GE = 15V
T_C = 25^oC
20 ^{TC = 125oC}
15
10
5
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
Common Emitter
V_GE = 15V
3.0
14A
2.5
7A
2.0
1.5
I_C = 3.5A
1.0
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
0
0.0 1.5 3.0 4.5 6.0 7.5 9.0
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
30
Common Emitter
V_CE = 20V
T_C = 25^oC
T_C = 125^oC
20
10
0
0
3
6
9
12
15
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
4
I_C = 3.5A
7A
14A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGB7N60UNDF Rev. A
4
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