FGA25N120FTD Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 19. Reverse Recovery Current
60
Figure 20. Stored Charge
30
50
200A/µs
40
di/dt = 100A/µs
30
20
200A/µs
di/dt = 100A/µs
10
20
10
15
20
25
30
Forward Current, I_F [A]
Figure 21. Reverse Recovery Time
1200
0
10
15
20
25
30
Forward Current, I_F [A]
1000
800
600
di/dt = 100A/µs
200A/µs
400
10
15
20
25
30
Forward Current, I_F [A]
Figure 22. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
single pulse
1E-3
1E-5
1E-4
P_DM
t₁
Duty Fact^to² r, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGA25N120FTD Rev. A
7
www.fairchildsemi.com