FGA25N120FTD Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180
T_C = 25^oC _20V
15V
150
17V
120
12V
90
60
10V
30
9V
8V ^{7V V}GE ^{= 6V}
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
V_GE = 15V
90
T_C = 25^oC
T_C = 125^oC
60
Figure 2. Typical Output Characteristics
180
T_C = 125^oC
20V
15V
17V
150
120
12V
90
60
10V
9V
30
8V ^{7V VGE = 6V}
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
120
Common Emitter
V_CE = 20V
T_C = 25^oC
90 _{TC = 125}o_C
60
30
30
0
0
1
2
3
4
5
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Common Emitter
2.7 ^{VGE = 15V}
50A
2.4
2.1
25A
1.8
1.5
I_C = 10A
1.2
0.9
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
0
0
3
6
9
12
15
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
50A
4
25A
I_C = 10A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGA25N120FTD Rev. A
4
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