FGA25N120FTD Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT

Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_FM
Diode Forward Voltage
I_F = 25A
T_C = 25^oC
T_C = 125^oC
t_rr
Diode Reverse Recovery Time
T_C = 25^oC
T_C = 125^oC
I_rr
Diode Reverse Recovery Time
I_ES =25A, dI_ES/dt = 200A/µs ^TC ^{= 25oC}
T_C = 125^oC
Q_rr
Diode Reverse Recovery Charge
T_C = 25^oC
T_C = 125^oC
Min.
-
-
-
-
-
-
-
-
Typ.
1.4
1.42
770
895
48
50
18
23
Max
1.8
-
-
-
-
-
-
-
Units
V
ns
A
µC
FGA25N120FTD Rev. A
3
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