FGA25N120FTD Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
500
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
t_r
100
Figure 14. Turn-off Characteristics vs.
Collector Current
1500
1000
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
t_f
t_d(on)
t_d(off)
10
5 10
20
30
Collector Current, I_C [A]
40 45
Figure 15. Switching Loss vs. Gate Resistance
10000
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 25A
T_C = 25^oC
T_C = 125^oC
E_off
1000
E_on
100
5 10
20
30
Collector Current, I_C [A]
40 45
Figure 16. Switching Loss vs. Collector Current
10000
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
E_off
T_C = 125^oC
1000
E_on
100
200
0
20
40
60
80
100
Gate Resistance, R_G [Ω]
30
0
10
20
30
40
50
Collector Current, I_C [A]
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
100
30
10
T_J = 125^oC
T_J = 25^oC
10
1
Safe Operating Area
V_GE = 15V, T_C = 125^oC
1
1
10
100
1000 2000
Collector-Emitter Voltage, V_CE [V]
0.1
0.0
T_C = 25^oC
T_C = 125^oC
0.5
1.0
1.5
2.0
Forward Voltage, V_F [V]
FGA25N120FTD Rev. A
6
www.fairchildsemi.com