FGA25N120FTD Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT

April 2008
FGA25N120FTD
tm
1200V, 25A Field Stop Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V_CE(sat) =1.6V @ I_C = 25A
• High input impedance
• RoHS complaint
Applications
• Induction heating and Microvewave oven
• Soft switching applications
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_C
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25^oC
@ T_C = 100^oC
Diode continuous Forward current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 100^oC
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitiverating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(Diode)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2008 Fairchild Semiconductor Corporation
1
FGA25N120FTD Rev. A
G
E
Ratings
1200
± 25
50
25
75
25
313
125
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
o_C
o_C
o_C
Typ.
-
-
-
Max.
0.4
1.42
40
Units
o_C/W
o_C/W
o_C/W
www.fairchildsemi.com