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FGA25N120FTD Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT
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Package Marking and Ordering Information
Device Marking
Device
FGA25N120FTD FGA25N120FTDTU
Package
TO-3PN
Packaging
Type
-
Qty per Tube
-
Max Qty
per Box
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 25mA, VCE = VGE
IC = 25A, VGE = 15V
IC = 25A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600V, IC = 25A,
RG = 15Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 600V, IC = 25A,
RG = 15Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 600V, IC = 25A,
VGE = 15V
1200
-
-
V
-
-
1
mA
-
-
±250
nA
3.5
6
7.5
V
-
1.6
2
V
-
1.88
-
V
-
3830
-
pF
-
130
-
pF
-
86
-
pF
-
48
-
ns
-
96
-
ns
-
210
-
ns
-
215
-
ns
-
0.34
-
mJ
-
0.90
1.20
mJ
-
1.24
-
mJ
-
44
-
ns
-
113
-
ns
-
232
-
ns
-
390
-
ns
-
0.38
-
mJ
-
1.39
-
mJ
-
1.77
-
mJ
-
160
-
nC
-
30
-
nC
-
78
-
nC
FGA25N120FTD Rev. A
2
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