FGA180N33ATD_13 Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 330 V PDP Trench IGBT

Typical Performance Characteristics
Figure 19. Reverse Recovery Current
4
200A/µs
3
2
di/dt = 100A/µs
1
5 10 15 20 25 30 35 40
Forward Current, I_F [A]
Figure 21.Reverse Recovery Time
40
di/dt = 100A/µs
30
200A/µs
20
Figure 20. Stored Charge
60
50
200A/µs
40
30
di/dt = 100A/µs
20
10
5 10 15 20 25 30 35 40
Forward Current, I_F [A]
10
5 10 15 20 25 30 35 40
Forward Current, I_F [A]
Figure 22.Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
0.05
0.01 ^0.02
0.01
single pulse
1E-3
1E-5
1E-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
7
FGA180N33ATD Rev. C0
www.fairchildsemi.com