FGA180N33ATD_13 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 330 V PDP Trench IGBT

FGA180N33ATD
330 V PDP Trench IGBT
Features
• High Current Capability
• Low Saturation Voltage: V_CE(sat) = 1.68 V @ I_C = 180 A
• High Input Impedance
• RoHS Complaint
Applications
• PDP TV
April 2013
General Description
Using novel trench IGBT Technology, Fairchild^®’s new series of
trench IGBTs offer the optimum performance for PDP TV appli-
cations where low conduction and switching losses are essen-
tial.
C
G DS
TO-3P
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
@ T_C = 25^oC
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test, pulse width = 100usec, Duty = 0.1
* I_{C_}pulse limited by max Tj
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(Diode)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
330
± 30
180
450
390
156
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.32
0.82
40
Unit
V
V
A
A
W
W
o_C
o_C
o_C
Unit
o_C/W
o_C/W
o_C/W
©2011 Fairchild Semiconductor Corporation
1
FGA180N33ATD Rev. C0
www.fairchildsemi.com